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  dg384a_mil d 1 s 1 nc dual-in-line in 1 d 3 v? s 3 gnd s 4 nc d 4 v+ nc in 2 d 2 s 2 top view 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 dg384a_mil/387a_mil vishay siliconix document number: 71679 s-04302?rev. a, 16-jul-01 www.vishay.com 1 cmos analog switches (obsolete for non-hermetic. see dg381b series for pin-for-pin replacements.)   
 

    15-v input range  low r ds(on) : 30   single supply operation  pin and function compatible with the jfet dg180 family  full rail-to-rail analog signal range  minimizes signal error  low power dissipation  low level switching circuits  programmable gain amplifiers  portable and battery powered sytems  

 the dg384a_mil and dg387a_mil monolithic cmos analog switches were designed for applications in instrumentation, communications, and process control. this series is suited for applications requiring fast switching and nearly flat on-resistance over the entire voltage range. designed on vishay siliconix? plus-40 cmos process, these devices achieve low power consumption (3.5 mw typical) and excellent on/off switch performance. these switches are ideal for battery powered applications, without sacrificing switching speed. break-before-make switching action is guaranteed, and an epitaxial layer prevents latchup. single supply operation is allowed by connecting the v? rail to 0 v. each switch conducts equally well in both directions when on, and blocks up to the supply voltage when off. these switches are cmos and quasi ttl logic compatible.  
    
 
  

   logic switch 0 off 1 on logic ?0?  0.8 v logic ?1?  4 v
dg387a_mil s 2 nc in nc nc v ? v+ nc d 1 nc d2 nc s 1 gnd dual-in-line top view metal can v ? top view nc gnd s 2 d 1 d 2 s 1 in v+ (substrate and case) nc 1 2 3 4 5 6 7 14 13 12 11 10 9 8 1 2 3 4 5 6 7 8 9 10 dg387a_mil dg384a_mil/387a_mil vishay siliconix www.vishay.com 2 document number: 71679 s-04302 ? rev. a, 16-jul-01  
    
 
  

   logic sw 1 sw 2 0 on off 1 off on logic ? 0 ?  0.8 v logic ? 1 ?  4 v 


 temp range package part number dg384a_mil ? 55 to 125  c 16-pin cerdip dg384aak/883 5962-9678801qea dg387a_mil  14-pin cerdip dg387aak/883 ? 55 to 125  c 10-pin metal can dg387aaa/883
dg384a_mil/387a_mil vishay siliconix document number: 71679 s-04302 ? rev. a, 16-jul-01 www.vishay.com 3  

 voltages referenced to v ? v+ 44 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gnd 25 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . digital inputs a , v s , v d (v ? ) ? 2 v to (v+) +2v or . . . . . . . . . . . . . . . . . . . . . . . . 30 ma, whichever occurs first current, any terminal except s or d 30 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . continuous current, s or d 30 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (pulsed at 1 ms, 10% duty cycle max) 100 ma . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature (aa, ak, suffix) ? 65 to 150  c . . . . . . . . . . . . . . power dissipation b 14-pin cerdip c 825 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10-pin metal can d 450 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . notes: a. signals on s x , d x , or in x exceeding v+ or v ? will be clamped by internal diodes. limit forward diode current to maximum current ratings. b. all leads welded or soldered to pc board. c. derate 11 mw/  c above 75  c d. derate 6 mw/  c above 75  c  


     figure 1. level shift/ drive v in s v+ gnd v ? d v ? v+
dg384a_mil/387a_mil vishay siliconix www.vishay.com 4 document number: 71679 s-04302 ? rev. a, 16-jul-01  


   test conditions unless specified limits parameter symbol v+ = 15 v, v ? = ? 15 v v in = 0.8 v or 4 v f temp b min c typ d max c unit analog switch analog signal range e v analog full ? 15 15 v drain-source on-resistance r ds(on) v d =  10 v, i s = ? 10 ma room full 30 50 75  source off leakage current i s(off) v s =  14 v, v d =  14 v room hot ? 1 ? 100  0.1 1 100 drain off leakage current i d(off) v s =  14 v, v d =  14 v room hot ? 1 ? 100  0.1 1 100 na drain on leakage current i d(on) v d = v s =  14 v room hot ? 11 ? 100  0.1 1 100 digital control input current with v in = 5 v room full ? 1 ? 1 ? 0.001 input current with input voltage high i inh v in = 15 v room full 0.001 1 1  a input current with input voltage low i inl v in = 0 v room full ? 1 ? 1 ? 0.001 dynamic characteristics turn-on time t on room 150 300 turn-off time t off see figure 2 room 130 250 ns break-before-make time t open see figure 3 room 50 charge injection q c l = 0.01  f, r gen = 0  v gen = 0 v room 10 pc source-off capacitance c s(off) room 14 drain-off capacitance c d(off) f = 1 mhz; v s , v d = 0 v room 14 channel-on capacitance c d(on) s d room 40 pf v in = 0 v room 6 input capacitance c in f = 1 mhz v in = 15 v room 7 off-isolation oirr  room 62 crosstalk (channel-to-channel) x talk v in = 0 v, r l = 1 k  v s = 1 v rms , f = 500 khz room 74 db power supplies positive supply current i+ v in = 4 v (one input) room full 0.23 0.5 1.0 ma negative supply current i ? v in = 4 v (one input) (all others = 0) room full ? 10 ? 100 ? 0.001 positive supply current i+ room full 0.001 10 100  a negative supply current i ? v in = 0.8 v (all inputs) room full ? 10 ? 100 ? 0.001 notes: a. refer to process option flowchart. b. room = 25  c, full = as determined by the operating temperature suffix. c. the algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data s heet. d. typical values are for design aid only, not guaranteed nor subject to production testing. e. guaranteed by design, not subject to production test. f. v in = input voltage to perform proper function.
dg384a_mil/387a_mil vishay siliconix document number: 71679 s-04302 ? rev. a, 16-jul-01 www.vishay.com 5 
   

     r ds(on) ? drain-source on-resistance ( )  r ds(on) vs. v d and power supply 100 ? 20 ? 15 ? 10 ? 50 5101520 80 60 40 20 0 60 ? 15 ? 10 ? 50 51015 50 40 30 20 10 v+ = 15 v v ? = ? 15 v 125  c r ds(on) vs. v d and temperature 50 ? 15 ? 10 ? 5051015 40 30 20 10 0 q (pc) v+ = 15 v v ? = ? 15 v c l = 1 nf charge injection vs. analog voltage (v s) 500 0 5 10 15 400 300 200 100 0 switching time and break-before-make time vs. positive supply voltage v+ ? positive supply voltage (v) t on (ns) , t off v ? = ? 15 v t a = 25  c v inh = 4 v v inl = 0 v ???????? ???????? ???????? 0 5 4 3 2 1 51015 v+ ? positive supply voltage (v) input switching threshold vs. positive supply voltage (v) t v v ? = 0 to ? 15v t a = 25  c ? 55 ? 35 ? 15 5 25 45 65 85 105 125 500 400 300 200 100 0 ? 100 supply current vs. temperature temperature (  c) i+, i ? (a) i+ i ?  5 v  7.5 v  10 v  15 v  20 v 25  c ? 55  c r ds(on) ? drain-source on-resistance ( )  t a = 25  c dg301/303 only t open t off t on v+ = 15 v v ? = ? 15 v v in = 4 v (one input) (all other = 0 v) v s ? source voltage (v) v d ? drain voltage (v) v d ? drain voltage (v)
dg384a_mil/387a_mil vishay siliconix www.vishay.com 6 document number: 71679 s-04302 ? rev. a, 16-jul-01 
   

     leakage vs. temperature switching time vs. power supply voltage off isolation and crosstalk vs. frequency supply curents vs. switching frequency f ? frequency (hz) f ? frequency (hz) temperature (  c) v+, v ? positive and negative supplies (v) (db) i+, i ? (ma) (ns) t on ,t off ? 55 ? 35 ? 15 5 25 45 65 85 105 125 10 pa 100 pa 1 na 10 na 120 20 10 k 100 k 1 m 10 m 100 80 60 40 15 0 5 10 1 k 10 k 100 k 1 m 10 400 350 300 250 200 150 100 50 0 12 14 16 18 20 22 v+ = 15 v v ? = ? 15 v t off t on switching time vs. temperature temperature (  c) (ns) t on ,t off ? 55 400 350 300 250 200 150 100 50 ? 35 ? 15 5 25 45 65 85 105 125 0 170 150 130 110 90 70 50 30 10 02 468101214 r ds(on) vs. analog and positive supply voltage v+, v ? positive and negative supplies (v) r ds(on) ? drain-source on-resistance ( )  100 na current i, i sd ? i +i v+ = 15 v v ? = ? 15 v v+ = 15 v v ? = ? 15 v v s , v d =  14 v i d(on) i d(off) or i s(off) t off t on v+ = 15 v v ? = ? 15 v v s = 3 v v+ = 5 v v+ = 10 v v+ = 15 v v ? = 0 v t a = 25  c v+ = 15 v v ? = ? 15 v r l = 50  off isolation crosstalk
dg384a_mil/387a_mil vishay siliconix document number: 71679 s-04302 ? rev. a, 16-jul-01 www.vishay.com 7 
 
 figure 2. switching time v s = 3 v r l r l + r ds(on) v o = v s c l (includes fixture and stray capacitance) v ? v+ in s c l 33 pf d 5 v r l 300  v o ? 15 v gnd +15 v 50% 90% 0 v 0 v 10% logic input switch output v s v inh t on t off logic ? 1 ? = switch on figure 3. break-before-make spdt (dg387a_mil) 0 v 50% 50% 50% 0 v 0 v logic input switch output switch output logic ? 1 ? = switch on v inh v s1 v s2 v o1 v o2 t bbm v o1 s 2 s 1 d 2 r l2 300  c l2 33 pf v+ v o2 v s2 = 3 v in v s1 = 3 v r l1 300  c l1 33 pf c l (includes fixture and stray capacitance) v ? d 1 ? 15 v gnd +15 v figure 4. charge injection on off on in x v o  v o c l 1 nf 5 v v ? ? 15 v v o gnd v+ r g s v g d in +15 v
dg384a_mil/387a_mil vishay siliconix www.vishay.com 8 document number: 71679 s-04302 ? rev. a, 16-jul-01 

  the dg384a_mil and dg387a_mil will switch positive analog signals while using a single positive supply. this allows their use in applications where only one supply is available. the trade-offs or performance given up while using single supplies are: 1) increased r ds(on) , 2) slower switching speed. typical curves for aid in designing with single supplies are supplied (see typical characteristics). the analog voltage should not go above or below the supply voltages which in single operation are v+ and 0 v. in the integrator of figure 4, r d controls the discharge rate of the capacitor so that the pulsed or continuous current ratings are not exceeded. during reset sw 1 is closed and sw 2 is open. opening sw 2 with sw 1 also open will hold the integrator output at its present value. ? + dg381a reset v in start/stop sw 1 sw 2 r d c r r v o  1 rc  v in  dt figure 5. integrator with reset and start/stop
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.


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